61312 tkim/21512ac tkim tc-00002694 no. a1965-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 CPH3910 n-channel jfet 25v, 20 to 40ma, 40ms, cph3 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? for am tuner rf ampli cation ? low noise ampli er features ? v gds : --25v max. ? | yfs | : 40ms typ. ? ciss: 6.0pf typ. ? nf: 2.1db typ. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dsx 25 v gate-to-drain voltage v gds --25 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d 400 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7015a-007 ordering number : ena1965a product & package information ? package : cph3 ? jeita, jedec : sc-59, to-236, sot-23 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl 1 : source 2 : drain 3 : gate cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95 1 2 3 j2 lot no. CPH3910-tl-e
CPH3910 no. a1965-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =--10 a, v ds =0v --25 v gate cutoff current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =100 a --0.6 --1.2 --1.8 v drain current i dss v ds =5v, v gs =0v 20 40 ma forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 30 40 ms input capacitance ciss v ds =5v, v gs =0v, f=1mhz 6.0 pf reverse transfer capacitance crss v ds =5v, v gs =0v, f=1mhz 2.3 pf noise figure nf v ds =5v, v gs =0v, f=100mhz 2.1 2.8 db ordering information device package shipping memo CPH3910-tl-e cph3 3,000pcs./reel pb free i d -- v ds i d -- v ds drain-to-source voltage, v ds -- v drain-to-source voltage, v ds -- v drain current, i d -- ma drain current, i d -- ma i d -- v gs i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma it16687 0 0.5 1.0 1.5 2.0 0 10 5 15 20 25 30 v gs =0v --0.2v --0.6v --0.8v --1.0v v gs =0v --0.2v --0.4v --0.6v it16688 0246810 0 10 20 15 5 25 30 35 40 --0.4v --0.8v --1.0v it16689 it16690 --2.0 --1.5 --1.0 --0.5 0 0.5 0 50 45 40 35 30 25 20 15 10 5 30ma i dss =40ma 20ma --2.0 --1.5 --1.0 --0.5 0 0.5 0 25 20 15 5 10 30 40 35 45 50 75 c v ds =5v 25 c ta= --25 c v ds =5v
CPH3910 no. a1965-3/6 crss -- v ds drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf ciss -- v ds v gs (off) -- i dss drain current, i dss -- ma cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- mw it16695 3 10 1.0 2 10 100 2 357 57 7 5 3 2 1.0 v gs =0v f=1mhz it16693 it16694 it16696 10 100 23 57 3 2 1.0 0.1 10 7 5 3 2 7 5 v ds =5v i d =100 a 23 57 57 23 1.0 10 100 10 1.0 5 7 2 3 v gs =0v f=1mhz 0 20 40 60 80 100 120 140 160 0 450 400 350 300 250 50 100 150 200 | y fs | -- i d | y fs | -- i dss drain current, i d -- ma forward transfer admittance, | y fs | -- ms drain current, i dss -- ma forward transfer admittance, | y fs | -- ms it16691 it16692 10 1.0 100 5 2 3 7 2 3 5 7 1.0 10 100 23 57 7 23 5 v ds =5v f=1khz i dss =30ma 10 100 23 57 10 2 3 5 7 100 v ds =5v v gs =0v f=1khz
CPH3910 no. a1965-4/6 embossed taping speci cation CPH3910-tl-e
CPH3910 no. a1965-5/6 outline drawing land pattern example CPH3910-tl-e mass (g) unit 0.013 * for reference mm unit: mm 0.6 2.4 0.95 0.95 1.4
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